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A numerical model for semiconductor laser diodes that predicts laser performance in high speed optical interconnect applications has been developed. The model is based on the temporal numerical simulation of the rate equation for semiconductor laser diodes. The popular math package MATLAB has been used to simulate the dynamic behavior of carrier and photon density. The term turn on delay time is defined...
This paper studies different kinds of methods on irregular object simulation, the methods applied mainly include the particle system method, the mathematic and physics-based method and the texture based method. Combining with the characteristic of each model, advantages and disadvantages of above methods, scope and effectiveness of the features were compared and the development of irregular objects'...
This paper investigates the variation of depletion region width in the p and n layers and the total depletion region width of GaN-based pin ultraviolet (UV) detector with applied voltage. The variation of barrier capacitance with applied voltage is presented. The carrier number in the depletion region of detector generated by the light irradiation has relationships with width of the depletion region...
I-V characteristic of the HfO2/SiO2 stack gate MIS capacitor is investigated. The gate leakage current in HfO2/SiO2 stack gate MIS capacitor decreases after constant voltage stress, which is caused by electron trapping. By analyzing the experiment and calculation results, the main transport mechanisms of the gate leakage current in HfO2/SiO2 stack gate is presented. The different transport mechanisms...
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