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The superconductor-ferromagnetic transistors (SFTs) with the SISFIFS structure (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively) are promising for various applications in superconducting electronics. Specifically, as current amplifiers, they can be used as line drivers and cell selectors in cryogenic memory. Here we report on results...
We report experimental results of the DC and RF characterization of multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. Applying a 0.2 MHz signal in addition to a constant DC bias current to the injector (SFIFS) junction, we observe a voltage gain of ∼1.25 on...
We have fabricated and characterized double-barrier multi-terminal superconducting transistor-like devices with the Nb/Al/AlOx/Al/Nb/Ni/Al/AlOx/Al/Nb (S1IS2FIS3) structure, where S, I, and F refer to superconducting, insulating, and ferromagnetic layers, respectively. A thin ferromagnetic Ni layer screens the superconductivity of the middle Nb layer on the injector-barrier side, so that the Nb/Ni...
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