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We present a compact model of the pn-junction for power device analysis using a physically based and numerically stable version of the approach proposed by Linvill in the 1950s. Problems with the original Linvill formulation have been eliminated by using quasi-Fermi potentials instead of mobile carrier densities as system unknowns and by adopting the Scharfetter–Gummel stable difference approximation...
A wafer probing system capable of both noise, and load and source pull measurements is described. The system is based on precision computer controlled electromechanical tuners. Sophisticated system software controls calibration, measurements, data analysis and display. Results of measurements of submicron In-GaAs/InAlAs/InP HEMTs and GaAs MESFETs are presented.
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