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We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active...
This paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate.
We analyzed the influence of a current aging on 380 nm band near-ultraviolet light-emitting diodes with different current densities. Aging have been carried out on LEDs with current densities of 5, 35 and 50 A/cm2 at room temperature for 1000 h. After stressed, both optical and electrical characteristics of LEDS are getting worse as increasing aging current density. We suggest that the possible degradation...
Near-ultraviolet light-emitting diodes (NUV LEDs) with different numbers of quantum wells (QWs) were grown by using metal-organic chemical vapor deposition (MOCVD) to investigate the effects of the number of QWs on the performance of NUV LEDs. With increasing number of QWs from 5 to 7 when using the same quantum well growth process, the normalized external quantum efficiencies (EQE) of 6- and 7-QW...
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