The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For the first step of evaluation of the effect of difference frequency distortion in intermodulation distortion and memory effects, we have derived distortion characteristics at the difference frequency as well as third-order intermodulation. In practical calculation of Volterra kernel in frequency domain, we used measured I-V characteristics, and S-parameters in both fundamental (around 2 GHz) and...
In this paper, we reveal an activation energy of a frequency-dependent drain conductance in AlGaN/GaN HEMT. Firstly, using two-port vector network characteristics at a low frequency less than MHz, it is confirmed that frequency dependence of a drain conductance (Gd) results in peculiar behavior in S22 of the AlGaN/GaN HEMT. In order to obtain the activation energy of the process of the frequency response...
We firstly demonstrate dynamic change in a drain conductance of an AlGaN/GaN HEMT from DC to high frequency using sinusoidal wave input signal from a network analyzer which can sweep from hertz to giga hertz. Prior to measurements, a bias-T which is adaptable at a frequency of hertz to mega hertz has been developed. S-parameter measurements sweeping from 5 Hz to 3 GHz reveals that the magnitude of...
The growth of GaN transistors on Si substrate has received tremendous attention due to large size availability of Si substrates at low cost. However, it is imperative to demonstrate a high breakdown AlGaN/GaN HEMTs on Si grown by MOCVD as high power device applications are the primary significant contribution expected of a GaN based devices. In the past, we have demonstrated high breakdown on AlGaN/GaN...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.