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This paper presents a temperature dependent empirical model for GaN HEMTs with the consideration of charge trapping and self-heating effects. A new 13-element drain current source (Ids) model is proposed. The current dispersion deduced by trapping and thermal effects is generally modeled by Taylor expansion, and for the first time, the dispersion related coefficients are rigorously derived to be the...
In this paper, a large signal model for AlGaN/GaN HEMTs is proposed which accounts for the thermal and trapping effects. Polynomials and overdetermined system is introduced to better address the complex thermal effect. The extraction is simple and fast compared with empirical models, since only solving overdetermined linear equations is required for the extraction of Ids. The extracted trapping and...
A novel extrinsic parameter extraction approach is presented for the technology independent modeling of transistors. For the first time, the extrinsic parasitic parameters are optimized based on the conservation of the internal current and charge-sources, which ensures the contour integration of de-embedded intrinsic parameters path independent. A large signal model of a 4 × 100um gate width InGaAs...
A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is presented, for the first time, artificial bee colony algorithm is applied to the global-optimization based parameter extraction and a novel intrinsic Y-parameter error function is proposed, which is not sensitive to noise and measurement uncertainty, and also highly consistent to the overall S-parameter error...
A new extraction approach of extrinsic parameters of GaAs/GaN HEMTs is present. This method is able to extract the extrinsic elements from just one set of S-parameters under weakly pinch off condition which biases the gate with a voltage slightly below the pinch off point, thus avoids any gate degradation and additional relationship for determining parasitic resistances in the conventional method...
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