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In this paper, we propose an enhanced efficiency 4H-SiC U-shaped trench-gate MOSFET (UMOSFET) structure. The proposed device structure takes an advantage of a p+-polySi/SiC shielded region to reduce the on-state specific resistance. We show that the heterojunction diode formed by the p+-polySi and the n-drift regions improves the body diode effect, and thereby, reduces the reverse recovery charge...
A lateral double-diffused MOSFET with double oxide trenches in silicon-on-insulator (SOI) technology is presented (DOT SOI LDMOS). The oxide trenches can cause multiple-directional depletion in the drift region. This can reshape electric field distribution and improve the reduced surface field effect (RESURF). Laterally, the top oxide trench can increase the electric field due to the low permittivity,...
In this paper, a parasitic capacitance model for a single three-dimensional (3-D) wire above a plate is developed. The model decomposes electric field into various regions and gives solutions to each part. The total capacitance is the summation of all capacitance parts corresponding to the electric field distribution. The model's physical base minimizes its complexity and error comparing to a traditional...
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