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As the weakest parts in through silicon via (TSV) structures, solder bump joints bear cyclic thermal stresses under power cycling in service, which contribute to the fatigue of them. Meanwhile, the dimensions of solder bump joints keep shrinking due to the miniaturization of electronic systems and products. The size effect can have significant influence on thermal fatigue behavior of the joints. In...
Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect-ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties...
Thermal stress in through silicon vias (TSVs) caused by the mismatch of coefficient of thermal expansion (CTE) between the filling material and silicon is a key challenge for three-dimensional electronic packaging due to the sophisticated inner structures. In most of the previous studies, the thermomechanical properties of TSV structured chips were analyzed in a unit cell so as to simplify the problem...
Through silicon via (TSV) is an emerging technology enabling three dimensional (3D) packaging through vertical interconnection between multiple chips, which can significantly increase I/O per unit area, reduce electrical resistance as well as RC delay, and miniaturize the solder interconnects. However, it can also dramatically increase the current density and thermal energy density in each interconnect...
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