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A new trench IGBT with carrier bypass region is proposed in paper. In this new structure, P+ bypass regions are introduced, which provided hole carrier bypass, reduced the parasitic thyristor effect in the trench IGBT, allowed higher safe operating area. The results are shown that the temperature characteristic of the new trench IGBT is better than that of the conventional trench IGBT. The metal which...
An improved trench insulated gate bipolar transistors (TIGBT), called the trench accumulation layer controlled insulated gate bipolar transistor (TAC-IGBT) is proposed. In this new device, the P base of the conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated. Numerical simulation results indicate that the structure has lower on-state voltage drop, larger latching...
Analytical thermal characteristics of current gain for BJT-BSIT (bipolar junction transistor-bipolar static induction transistor) compound device in the low current operation is proposed. The author makes the thermal model and also obtains a best thermal compensating factor of the compound device that indicates the relationship between the thermal rating of current gain with device structure parameters...
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