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Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized...
We measured HX-PES (Si 1s) of ultra low energy ion implantation (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding...
We measured HX-PES (Si 1s) of low energy ion implanted silicon substrate before and after spike RTA, and compared it with that of plasma doped (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. After spike RTA, PD sample showed superior impurity activation than that of I/I sample. Both I/I sample and PD sample showed...
Ultra-shallow P+/N junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance...
We took HX-PES measurement (Si 1s) on silicon samples doped by plasma doping (PD) for the first time before and after annealing using either spike RTA or flash lamp anneal (FLA) in SPring-8. After PD, the carrier density of n-Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing, the results revealed that the chemical binding states of the doped samples...
Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45 nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike...
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