The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate graphene-on-silicon nitride electroabsorption modulators for inherently linear RF modulation on-chip with a spurious free dynamic range (SFDR) of 100 dBc/Hz2/3.
We propose a method for linearizing the response of depletion-mode silicon waveguide modulator based on the engineering of modal overlap with the depletion region. Simulations show suppression of nonlinearities in index-voltage transfer function, enabling SFDR of 116 dB/Hz2/3 in MZM configuration.
We present the first demonstration of the electro-optic effect in Si3N4 by using a multislot waveguide structure. We measure the maximum EO coefficient of 8.31±5.6fm/V, and demonstrate EO modulation at 1GHz.
We experimentally demonstrate the first ultrafast graphene modulator by exploiting Zeno coupling effects in a graphene-on-silicon-nitride ring resonator.
We demonstrate a 3.4-pJ/bit CMOS-driven VCSEL link incorporating latched half-rate inputs and outputs operating error-free at 28 Gb/s over a few meters of multimode fiber.
We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved.
We present the vision of back-end deposited silicon photonics (BDSP) and review works that have been done in this field. Individual aspects of BDSP platform including excimer-laser-annealed polycrystalline silicon, low-loss plasma-enhanced chemical vapor deposition silicon nitride waveguide, modulator, detector, electrical interface, back-end CMOS compatibility, and benefits of the platform are discussed...
We demonstrate optical resonators and waveguides monolithically integrated on a CMOS die through post-backend processing. Both CMOS process integrity and optical performance are verified and measured.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.