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This paper presents the design and realization of a novel low-power 6-bit successive approximation logarithmic ADC for biomedical applications. A two-step successive approximation method is proposed to obtain a piecewise-linear approximation of the desired logarithmic transfer function. The proposed ADC has been designed and simulated using process parameters from a standard 0.35 μm 2P4M CMOS technology...
This paper describes the design and realization of a programmable 4th-order, Gm-C bandpass filter for biomedical applications. The core 2nd-order filter stage is realized by a simple gyrator-C active inductor structure with a single MOSFET as the transconductor element. The capacitive input attenuation technique is used to enhance the linearity of the filter. The proposed filter was designed and simulated...
This paper presents the design and realization of a programmable 4th-order bandpass filter for biomedical applications in a standard 0.18 μm CMOS technology. The center frequency is adjustable from 80 Hz to 7 KHz, using a 6-bit digital-to-analog-converter (DAC). At a center frequency of 1 KHz and quality factor of 4, the simulated dynamic range is 53.6 dB for 1% total harmonic distortion (THD) and...
This paper presents the design and realization of a low-noise, low-power, wide-dynamic-range CMOS logarithmic amplifier for cochlear implant system in a standard 0.18μm CMOS technology. The proposed logarithmic amplifier is based on the true piecewise linear function by using progressive-compression parallel-summation architecture. The overall circuit consumes only 9.1 μW from a 1.3 V single power...
This paper describes the design and realization of a low-noise, low-voltage, low-power CMOS logarithmic amplifier for bio-signal and neural recording applications. The proposed logarithmic amplifier is based on the progressive-compression parallel-summation architecture with DC offset cancellation feedback loop. A new fully differential limiting amplifier with bulk-driven current mirror active load...
The purpose of this work is to study the effect of X-ray irradiation on pn junction power diode. The diodes were designed and fabricated using standard CMOS technology. Irradiation with exposure energy of 70 keV and various exposure times (5, 55, and 205 seconds) were applied on the diodes. The temperature dependence of the current-voltage (I–V) characteristics of the diodes was measured in the temperature...
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