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This paper reports a three-step fabrication method for highly ordered silica nanowire bunch arrays of diversiform shapes. After patterning of organic polymers on Si substrates through photo lithography, oxygen plasma bombardment is applied to fabricate nanowire bunch arrays. On one hand, oxygen plasma exploits Si source from the substrates, and, subsequently, the gaseous Si react with active oxygen...
Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the tunneling direction have been fabricated using a novel gate-recess process, resulting in record on-current. The tunnel junction consists of InAs/GaSb with a broken band alignment. The gate-recess process results in low drain contact and access resistances; together with the favorable broken gap heterojunction,...
An increasing number of semiconductor companies have research programs related to MEMS products. This can be explained by the wide variety of application areas for MEMS, some mechanical MEMS examples are: filters, oscillators, pressure sensors, particle detection, thermometers and gyroscopes. Many mechanical MEMS operate in vacuum and sealing of the cavity can be obtained by using a wafer level thin...
A Smart Grid with distributed generation is critical for reducing greenhouse gas emissions. However, current power converters and circuit breakers built with silicon switches are very bulky and inefficient, making their use difficult in practical Smart Grid systems. The development of high voltage power devices based on SiC will be a critical development in building a Smart Grid with distributed and...
Power devices made on Silicon Carbide (SiC) are expected to offer significant advantages over silicon due to the unique material properties. With the continuing improvement in both material quality (defect density and carrier lifetime) and SiC device fabrication process, SiC power devices are increasingly fabricated with higher blocking rating and larger die size. This paper describes the benefits...
In this study, we examined triangular defects (TD) present in 4H-SiC junction barrier Schottky devices (JBS) by means of I-V measurements, infrared (IR) microscopy, electron beam induced current (EBIC), and electroluminescence (EL). The structure of TD's was analyzed by Nomarski differential interference contrast microscopy (NDIC) and transmission electron microscopy (TEM). IR-microscopy images provide...
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