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The insulated gate transistor (IGT) has been modeled as a wide-base bipolar junction transistor (BJT) driven by a MOSFET. Therefore, the vertical wide-base BJT structure influences the following IGT characteristics: 1) the forward current-voltage characteristics, 2) the fall time/forward-voltage drop trade-offs, 3) the high-temperature blocking, and 4) the turn-off current tail. An IGT with punch-through...
This paper describes a recently developed computer program called SEMINET (for SEMIconductor NET-work). SEMINET enables user-oriented modeling of electronic circuits including “exact” numerical analysis of power semiconductor circuit elements. Analytical semiconductor device models are also available in addition to the usual complement of passive components and voltage and current sources. Generalized...
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