The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
FinFETs have been made successfully for mass manufacturing on bulk and silicon-on-insulator wafers. When choosing the bulk option, additional process steps are needed for substrate leakage suppression. Typically, heavy substrate doping for punchthrough stopping between the source and drain is used, but precise control of the doping profile to prevent its up-diffusion into the channel has been a challenging...
An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.