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Based on the charge analysis in the Pao–Sah model assuming the exponential deep and tail density of trap states (DOS), the above-threshold current expressions are presented. The trapped charge in the deep DOS is included in the threshold voltage. In particular, a trapped charge effect parameter \(\beta \) , which is determined mainly by the tail DOS, is introduced into the current expressions. The...
Based on the surface potential calculation by the 1-D poisson's equation, the grain boundary barrier height at channel surface is derived accurately assuming an exponential density of trap states (DOS) within the energy gap. The threshold voltage is defined as the gate voltage when the free charge density is equal to the trapped charge density at the surface of channel, corresponding to the depleted...
Electrical characteristics of polysilicon thin-film transistors (poly-Si TFTs) are strongly affected by density of trap states in the energy bandgap. Based on the single exponential deep state density, two-dimensional simulation is used to construct an n-channel poly-Si TFT and simulate its DC and AC characteristics. Subthreshold swing, threshold voltage and gate capacitances are included. Compact...
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