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Important criteria for the widespread usage of DC electricity are the overall energy efficiency and cost of delivering electricity from the point of generation to the point of usage. Wide bandgap (WBG) semiconductor power switching devices, including those made from Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductors, offer unprecedented advantages over conventional silicon devices in terms...
A simple model for heat generation and heat spreading, and temperature rise of the active region of a power semiconductor switch is presented by properly accounting for semiconductor and package thermal and heat capacity parameters. The model is used to estimate the effect of finite substrate thickness in silicon and wide bandgap (WBG) power switching devices on junction temperature rise. Whereas...
High-voltage (≥100 V) power diodes fabricated on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride are generally rated for punch-through leakage current and employ a buffer layer sandwiched between the drift region and substrate. A simple and accurate method for the extraction of important diode design parameters is presented and validated using extensive static current-voltage...
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