The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The impact of passive signal integrity (SI) improvement techniques on the radiated emission (RE) for different interconnections between digital devices is presented. In high speed digital integrated circuits, SI is no longer the only issue for desired functional performance. RE is also critical for the functional performance and for compliance with EMC standards. Hence, it is important to understand...
Input/Output Buffer Information Specification (IBIS) models are widely used in signal integrity analysis of digital devices. Advantages of using IBIS models include protection of proprietary information and reduction of simulation time. However, compared with Spice models, IBIS models have some inherent deficiencies, which can lead to inaccurate results in simultaneous switching noise (SSN) simulations...
Input/Output Buffer Information Specification (IBIS) models are widely used in signal integrity analysis because of their ability to protect proprietary information and to reduce simulation time when compared to full SPICE simulations. Generation of IBIS models with I/V and V/T data from a full SPICE model of a typical digital buffer without and with package parasitics is investigated in this paper...
Seven models for the drain thermal noise of deep submicron MOSFETs are compared in this paper. The models have been applied to MOSFETs with channel lengths ranging from 65 nm to 250 nm operating in the linear and saturation regions. It is found that under the same drain voltage and gate voltage, the drain thermal noise increases as the channel length reduces. All models predict different values for...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.