The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed...
For flash memory devices the thicknesses of the control and tunneling oxides in the floating gate transistor (FGT) are crtical parameters. We recently proposed a floating gate transstor using multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In this paper, we have analyzed the impacts of scaling the thickness of the control and tunneling oxides in the proposed MLGNR/CNT based FGT....
Floating gate transistor is the basic building block of nonvolatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. As silicon based integrated circuit technologies are approaching the limits of scaling, carbon based nanoelectronic devices are emerging as the future platform for low power, low cost, high performance and environment...
The charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al2O3 tunneling and capping oxide layers were studied. Significantly different amounts of memory window were obtained with the different sizes of Pt NP embedded MOS structures and reached a maximum of 4.3 V using a 1.14 nm Pt NP, which has the strongest...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.