Search results for: Jerry Tsay
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The recent increase in RFID usage coupled with the evolving IoT has revamped the need for Wireless Power Transfer (WPT). In this paper, a brief review of systems using WPT is offered including: RFIDs, inductively coupled systems and electromagnetic harvesters. A case study for phased array antenna beamforming and its benefits to wireless power transfer are given. A 3x linear patch array at 5.8 GHz...
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The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF PAs in both CMOS and SiGe BiCMOS technologies with performance rivaling those of the III-V RF PAs. We will,...
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A couple of design examples on highly-efficient fully-monolithic silicon-based envelope-tracking power amplifiers (ET-PA) for broadband wireless applications will be presented. These RF PAs are designed in SiGe BiCMOS technologies in either common-emitter (CE) or cascode topologies, as SiGe can deliver higher POUT with better breakdown robustness than their CMOS counterparts. The envelope modulator...
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In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3–5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25...
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This paper presents a highly efficient power amplifier (PA) using the envelope tracking (ET) technique for 3G W-CDMA applications. The PA is designed in the IBM 0.35-µm SiGe BiCMOS process with through-silicon-via (TSV). The CMOS envelope modulator IC is designed and fabricated in the TSMC 0.35-µm SiGe BiCMOS process. The ET-PA system achieves an overall composite power-added-efficiency (PAE) of 35...
