The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The extraction of the floating gate voltage on the Multiple-Input Floating-Gate Transistor is discussed in order to understand their behavior in a better way. The lack of linearity at very low voltage is discussed. The presence of a residual charge on the floating gate is experimentally shown despite the use of metal contact to discharge it. This analysis is useful to enhance the mathematical model...
The Floating Gate MOS Transistor with Multiple Inputs is a device that offers some advantages with regard to the conventional MOS transistor. However, even today, there is a lack of formal and detailed analysis about the analog model in the literature. An accurate model of this device is very important for designing high performance analog cells. In this document a strategy for modeling the floating...