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An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high...
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise...
A self-switching diode (SSD) is based on an asymmetric nanochannel. The SSD is fabricated by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction but also either widens or narrows the effective channel width, depending on its sign. This results in a strong nonlinear current-voltage I-V...
A self-switching diode (SSD) is based on an asymmetric nanochannel. The SSD is fabricated by tailoring the boundary of a narrow semiconductor channel to break its symmetry. An applied voltage V not only changes the potential profile along the channel direction but also either widens or narrows the effective channel width, depending on its sign. This results in a strong nonlinear current-voltage I-V...
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