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Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of...
Semiconductor lasers based upon self-assembled quantum dots (QDs) are a promising source for applications in optical networks. Their charge-carrier confinement in all three spatial dimensions results in a range of special attributes such as ultra low threshold current, high material gain, small line width and weak temperature dependence when compared to conventional quantum well lasers [1]. When operated...
Quantum-dot lasers can exhibit simultaneous ground- and excited-state lasing. With increasing pump current, a quenching of the ground-state lasing intensity is sometimes observed. The causes for this are investigated, and its dependence on temperature, gain, and electron–hole asymmetry is studied via an analytical approach. A numerical model based on the semiconductor Bloch equations with a set of...
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