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The Through-SiliconVias (TSV) is a key component of three dimensional electronic packaging. Obtaining its stresses is very important for evaluating its reliability. A micro-infrared photoelasticity system with a thermal loading function was built and applied to characterize the stresses of the TSV structure. Through testing it was found that the stress of each TSV is different even if their fabrication...
In this paper, we followed the advice of Prof. Tu to investigate the effect of stress on the electromigration behavior of solder. Static electromigration test and thermal cycle test (−55°C - 125°C) with maximum current density of 2×104A/cm2 were performed. In the fatigue test, it was found that the specimens without electricity had the longest MTTF which suggested electromigration may accelerate failure...
We have developed a micro-infrared photoelastic system to evaluate the stress of through-silicon-vias (TSV). It was found that the stresses of some TSVs increased after thermal cycling, and the scanning electron microscope revealed that those TSVs with stress increased had Cu filler pumped under thermal loading, but no interfacial fracture were observed. Then the annealed samples were heated up to...
The through-Silicon-Vias (TSV) is a key component of three dimensional electronic packaging, knowing its stresses is very important for its reliability evaluation. In this paper, we evaluated the stress of TSV during thermal cycling with a micro-infrared photoelasticity system in full field and real time measurement mode, three important findings are reported. First, it was found that electroplating...
In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through...
In this paper, thermo-mechanical reliability of a three-dimensional (3D) package based on through-silicon-via (TSV) under different thermal cycling was investigated with finite element method. A finite element simulation of this 3D package was performed in order to compare the thermal stress and fatigue lives of the solder joints with and without underfill. It was found that the fatigue live of solder...
In this paper, a Micro-Infrared Photo-elasticity (MIPE) system was set up and applied to evaluate the residual stress of Si chip around TSV. The MIPE system can only give overall stress information along thickness. To investigate the stress distribution around TSV quantitatively, finite element method was employed and the simulation results were compared with that of experimental measurements. Through...
In this paper, thermo-mechanical reliability of a three-dimensional (3D) package based on through-silicon-via (TSV) under different thermal cycling was investigated with finite element method. A finite element simulation of this 3D package was performed in order to compare the thermal stress and fatigue lives of the solder joints with and without underfill. It was found that the fatigue live of solder...
This paper proposes a protection mechanism utilizing Hamiltonian cycle based on slots. Numerical simulation shows the proposed scheme achieve higher level of survivability for the traffic in the Elastic Optical Networks.
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