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Graphene Nanoscroll Field-Effect-Transistor (GNSFET) potential is assessed in replacing silicon as the next scaled transistor. The GNSFET is benchmarked with 22nm PTM model silicon MOSFET. The silicon MOSFET I-V characteristics were computed using HSpice Cadence tools. The charge distribution in GNSFET was characterized based on the Landauer Buttiker's formalism. The output current shows good agreement...
Graphene continues to fascinate the research community due to its excellent physical and electrical properties. In this study, the electronic and transport characteristics of armchair graphene nanoribbon (AGNR) with a Stone-Wales (SW) defect is investigated. The SW defects are located at three different locations on the AGNR device; underneath the metal gate, near the drain and near the source. The...
Graphene has become a potential successor to silicon in electronic devices. In this paper, the performance of dualchannel armchair graphene nanoribbon field-effect transistor (AGNR FET) is investigated. Both physical and electrical properties of dual-channel AGNR FET are simulated using Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. Current-voltage...
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