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This study examined high-current events observed in Xilinx Field-Programmable Gate Arrays irradiated with heavy ions. A probable cause and proposed changes to the test methodology to prevent these high-current events is described.
This study describes complications introduced by angular direct ionization events on space error rate predictions. In particular, prevalence of multiple-cell upsets and a breakdown in the application of effective linear energy transfer in modern-scale devices can skew error rates approximated from currently available estimation models. This paper highlights the importance of angular testing and proposes...
This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.
This paper describes current ongoing research pertaining to the analysis of design radiation hardness for circuits implemented in Field-Programmable Gate Array (FPGA) devices. Radiation induces single event effects in FPGAs that can cause erroneous operation by upsetting data bits or changing logic behavior. Design-level techniques can help mitigate these upsets to some degree; however, there is currently...
This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.
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