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A novel buffer structure for improving the trade-off between forward voltage and reverse recovery loss across the whole range of current density and realizing the softness during reverse recovery was developed. The structure named a ldquoBroad Buffers from Double Sides structurerdquo (BBDS) is composed a broad p- anode layer and a broad n- buffer layer. A novel technique called ldquoLocal Lifetime...
Impact of area scaling (especially narrow channel) on Vt lowering by La incorporation in high-k gate NMOSFETs is reported for the first time. It is clarified that Vt becomes higher in narrower channel for La-containing high-k gate. Efforts are made to ascribe the strong dependence of Vt on gate width to less effectiveness of La compared to wider channel. Influence of channel orientation at STI edge...
Intensity of second-harmonic generation from 3D photonic crystals fabricated from opal templates impregnated by gallium nitride and silicon shows pronounce enhancement for wavelength and angles of incidence corresponding to efficient nonlinear diffraction along the Lambda direction.
This report describes an improvement of the CaF 2 buffer layer for the heteroepitaxy of the ZnO films on Si (111) substrates. In the heteroepitaxy, the quality of CaF 2 buffer layer plays an important role to transmit the epitaxial relationship from Si to ZnO by suppressing the oxidation of substrate surface. Although CaF 2 has a closely matched lattice constant to Si, a low-temperature...
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