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Physical defects in capacitive MEMS devices can change the nominal device capacitance by a few femtofarads. Detecting such small variations is challenging particularly in the presence of Process, Temperature, and supply Voltage (PVT) variations. A test solution utilizing a phase locking circuit is presented in this paper to minimize the effect of PVT variations on fault detection. A Delay Locked Loop...
Through silicon via (TSV) is considered an enabling technology for 3-D integrated circuit (IC) integration. Testing 3-D ICs with multiple stacked dies is a challenging task. Probing a TSV for the purpose of testing with conventional wafer probes can undermine its physical integrity. In this paper, a contactless TSV probing method using capacitive coupling is presented. The proposed solution eliminates...
3D IC using Through Silicon Via (TSV) is a promising technology for next generation of integrated circuits. Manufacturing TSV defects like voids and pinholes have to be detected at the test phase to ensure fault free ICs. In this paper a contactless probe utilizing capacitive coupling is presented. The proposed method eliminates the impact of direct probing on TSV and supports the high-density and...
A contactless TSV probe based on the principle of resonant inductive coupling is presented in this work. The proposed scheme allows TSV data observation up to 2Gbps when the probe and TSV are 15μm apart.
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