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Characteristics of fast recovery diode (FRED) type super junction MOSFET (SJ-MOS) are reported. The reverse recovery ruggedness (-di/dt ruggedness) of the SJ-MOS FRED is dramatically improved compared to that of non-FRED type, which is almost 16 times better.
We have investigated evolution of transport and low-energy spin fluctuation properties of heavy Fermi liquid compounds YbAuCu4 and YbPdCu4 with the application of magnetic field. YbAuCu4 is found to be driven from the originally antiferromagnetically (AFM) ordered ground state (TN∼0.8K) to a nonmagnetic Fermi liquid (FL) one through the field-tuned quantum critical point (QCP) at Hcr≃13kOe(TN→0)....
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