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This paper describes a compact model for an SiC-MOSFET, which features characterization and modeling of a novel drain-gate capacitor. In addition, the inner gate resistance and stay inductances of the package are evaluated and modeled by a newly-proposal method. The gate drive circuit is also modeled and involved in this simulation study. The model shows excellent agreements in steady and transient...
This paper describes a novel compact model for a SiC-MOSFET. The model is useful to achieve accurate simulation of output characteristics from a linear region to a saturation region, selecting both gate–source voltage and temperature as parameters. In order to construct the model systematically, attention is paid to a physics-based modeling procedure with channel mobility as an adjustable parameter...
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