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As device sizes are downscaled to nanometer, Random Telegraph Noise (RTN) becomes dominant. It is indespensable to accurately estimate the effect of RTN. We propose the RTN simulation method for analog circuits. It is based on the charge trapping model. We replicate the RTN-induced threshold voltage fluctuation to attach a variable DC voltage source to the gate of MOSFET by using Verilog-AMS. We confirm...
We analyze the correlation between BTI (Bias Temperature Instability)-induced degradations and process variations. BTI shows a strong effect on highly scaled LSIs in the same way as the process variations. It is necessary to predict the combinational effects. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure initial frequencies and the...
The transistor size keeps shrinking by Moore's law and timing degradation of the scaled transistors is becoming critical. Recently, the scaling of CMOS technology increases the effect of NBTI (Negative Bias Temperature Instability) in PMOS. NBTI is an important reliability issue for analog as well as digital CMOS circuits. As transistors are scaled refined, the impact of NBTI becomes more critical...
Bias Temperature Instability (BTI) becomes one of the most important reliability issues for nanometer process devices. We focus on aging degradation by BTI because it is known as one of the dominant factor that determines life time of circuits. In this paper, we show circuit delay degradation characteristic of BTI using the circuit simulation. The delay increase 15% after 10 years stress.
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