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3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a hybrid half-bridge in a 3D packaging configuration, dedicated for high voltage application. A dynamic electrical test of the package is presented.
An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- $\mu\hbox{m}$-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bondwireless approach using cylindrical copper bumps. Advanced numerical structural simulation...
Photovoltaic energy conversion has been on the spotlight of scientific research for several years. Special attention was paid to the grid-connected inverters that do not feature an insulation transformer (transformerless topologies). In this framework, Neutral Point Clamped inverters have gained interest due to the low ground leakage current. Recently, the research has been focused on high-efficiency...
The recent research exercises have targeted the transfer of the sandwich package benefits to application bespoke switch design, including flipchip and device stacking topology [1]. This paper will present the work in an alternative integration scheme for a half-bridge switch using 70μm thin Si IGBTs and diodes addressing higher strength, higher toughness and higher thermal conductivity. Using alumina...
Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230Vrms grid voltage are presented for different switching frequency, device case temperature and load conditions. The switching...
A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are...
An application oriented integration concept for half-bridge switch assembly has been developed based on the latest generation Infineon Technologies 70um thin IGBTs and diodes, rated at 200A/600V. This paper addresses the thermo-mechanical simulation to optimize the designed assembly along with three different cylinderical bump shapes for reducing the stress and creep strain development in the solder...
This paper presents the assembly of a half-bridge switch taking into account the actual current commutations encountered in power converter topologies. So, rather than optimizing the connection between an active switch (e.g., IGBT) and its anti-parallel freewheeling diodes, a novel approach is proposed which favors compact interconnection of the high-side transistor with the low-side diode and vice-versa...
This paper presents a high power density vertical integration scheme for bi-directional power switches. In this original approach, the power semiconductor devices are stacked in pairs, but are both connected with their backside to the cooling plane. Thus, double sided cooling is ensured, while power density and parasitic inductance values are improved as compared to previous approaches. In particular,...
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