The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We generate a 790-nm wide Mid-IR supercontinuum, spanning from 1.63 μm to 2.42 μm, in a hydrogenated amorphous silicon waveguide. The pump source is a 160-fs Thulium doped fiber laser centered at 1910 nm.
We demonstrate phase-sensitive amplification in hydrogenated amorphous silicon waveguides based on pump-degenerate four-wave mixing at 90 MHz and 10 GHz. An 11.7 dB (6.6 dB) phase-sensitive extinction ratio is achieved at 90 MHz (10 GHz).
Highly nonlinear CMOS-compatible hydrogenated amorphous silicon (a-Si:H) waveguides are studied for broad bandwidth and low-power parametric processing. Utilizing its favorable nonlinear properties, optical parametric amplification and oscillation are demonstrated.
We utilize a coherent optical comb generator to accomplish source-efficient wavelength multicasting via four-wave mixing in both a highly-nonlinear fiber and a silicon nanowaveguide. We demonstrate 23 multicast channels with error-free operation at 10-Gb/s.
We demonstrate for the first time optical parametric amplification (OPA) operating at GHz rate in near-IR using hydrogenated amorphous silicon waveguide. The strong gain at this repetition rate shows its potential for telecommunication applications and a GHz-rate optical parametric oscillator.
Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER <; 10-9) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.
We report measurements of the non-instantaneous nonlinear response of hydro-genated amorphous silicon nanowire waveguides at telecommunications wavelengths. We compare the results to those obtained with similar crystalline silicon nanowires.
We demonstrate frequency-resolved optical gating using four-wave mixing in a hydrogenated amorphous silicon nanowaveguide. The ultrahigh nonlinearity and the wide conversion bandwidth of this device allow characterization of sub-ps pulses with high sensitivity.
We report broad-bandwidth optical parametric amplification using a 6-mm-long hydrogenated amorphous silicon (a-Si:H) waveguide. Amplification is obtained over more than 55 THz (∼440 nm) centered at telecommunication wavelengths.
We demonstrate all-optical signal regeneration using a Mamyshev design in a hydrogenated amorphous silicon (a-Si:H) waveguide. Bit-error-rate improvement of 2 dB is achieved with 5.2 W peak power at telecommunication data rates (10 GHz).
We demonstrate nonlinear frequency conversion in hydrogenated amorphous silicon (a-Si:H) with conversion efficiency of −13dB at telecommunication data rates. Conversion bandwidths of 150nm are measured in CW regime at telecommunication wavelengths.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.