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La2O3 and Y2O3 are used as gate dielectric in Ge MOS capacitors, and their electrical and interfacial properties are comparatively studied. Due to the much higher reactivity of La2O3 with Ge than Y2O3, thicker germanate interlayer is formed, leading to better interface quality for the former. Moreover, it is found that N incorporation in the oxides reduces the formation of both germanate and GeOx,...
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