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A composite metal-oxide–semiconductor sensor array based on tungsten oxide (WO3) and zinc oxide (ZnO) was fabricated using a simple mechanical mixing method. The array was characterized using scanning electron microscopy, X-ray diffraction, Raman scattering, and X-ray photoelectron spectroscopy and tested against a variety of oxidizing and reducing gases at various operating temperatures in the range...
An array of composite metal oxide semiconductor (MOS) sensors based on WO3 and ZnO, has been fabricated and evaluated against various concentrations of ethanol and NO2 at operating temperatures between 300–500 °C. The composites were prepared by simple manual mechanical mixing and screen printed as porous thick-film gas sensors, and characterized by Scanning Electron Microscopy (SEM) and X-ray Diffraction...
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