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This paper examines device sizing of CMOS inverter circuit at 22-nm technology node using predictive technology model in deep subthreshold region. Channel length (L) of the device is resolved to obtain optimized threshold voltage @ supply voltage of 150 mV. Aspect ratio of Inverter logic gate is determined for the same supply voltage. Symmetrical transient response analysis is performed. It is found...
This paper investigates the most popular 1-bit CMOS full adder circuits to examine them for robustness and consistency against adverse variations in process parameters using ultra deep submicron technology nodes such as 16-nm. A ±10% variation is applied in an HSPICE environment to the nominal supply voltage of 0.7 V in the standard superthreshold region, to follow projected trends predicted by the...
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