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A new 18-element small-signal model for GaN high electron mobility transistor is presented to operate at very high frequencies around 70 GHz. This model accounts for the need of a capacitor to represent the capacitive effect between the end of the drain electrode and contacting pad of the gate electrode. An extrinsic parasitic gate-drain capacitance as for higher frequencies this parameter becomes...
A new 18-element small-signal model for GaN high electron mobility transistor is presented to operate at very high frequencies around 70 GHz. This model accounts for the need of a capacitor to represent the capacitive effect between the end of the drain electrode and contacting pad of the gate electrode. An extrinsic parasitic gate-drain capacitance as for higher frequencies this parameter becomes...
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