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We propose a new approach to describe in commercial TCAD the chemical reactions that occur at dielectric/electrolyte interface and make the ion sensitive FET (ISFET) sensitive to pH. The accuracy of the proposed method is successfully verified against the available experimental data. We demonstrate the usefulness of the method by performing, for the first time in a commercial TCAD environment, a full...
In this paper, the advantages and the challenges posed by Tunnel FETs (TFETs) are studied in the context of ultra-low voltage SRAM bitcells operating below 500 mV. A comparative analysis of TFETs, SOI and bulk CMOS in 32 nm technology is performed through device- (TCAD) and circuit-level (VerilogA) simulations. Sensitivity to the key device parameters is analyzed to quantitatively evaluate the impact...
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