The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A comprehensive description of band gap and effective masses of III–V semiconductor bulk and ultra-thin body (UTB) structures under realistic biaxial and uniaxial strain is given using numerical simulations from four different electronic structure codes. The consistency between the different tools is discussed in depth. The nearest neighbor sp3d5s* empirical tight-binding model is found to reproduce...
This paper describes some of the most relevant challenges in the physically based modelling of transport in nano-MOSFETs. In particular, we start by discussing the determination of the band-structure in nano-scale devices. In fact, most of the device engineering options affect the device performance through the band-structure, which determines the carrier velocity and the scattering rates. We then...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.