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A five parameters I-V model has been presented to predict I-V characteristics of submicron GaAs MESFETs. The proposed model guaranteed convergence in an optimization process and does not trap in a local minimum which is frequently observed in Dobes model. Comparison between the Dobes and the proposed model has been carried out by developing an optimization code based on particle swarm optimization...
A wideband power divider on single layer microstrip technology is proposed, analyzed and fabricated. The proposed divider is designed by using two-section impedance transformers with an input and two symmetrical output extension lines. The analysis of the power divider is performed by applying transmission line theory. Better return loss and isolation factor is demonstrated over 50% impedance bandwidth...
A single stage low noise amplifier is developed for Ku-band applications. The design is aimed to provide low noise figure and high associated gain. Submicron gate length GaAs MESFET is used as an active device because of its superior high frequency properties. Device equivalent circuit parameters are first evaluated with and without pad capacitors using measured S-parameters. Low noise amplifier is...
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