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Power semiconductor devices for electric power conversion must be highly efficient, compact, and with large capacity. Therefore, highly thermo stability and long fatigue lifetime are necessary for the joint materials of these devices. In this paper, we discuss the joint reliability obtained by applying the supersaturated Sn-13wt. % Sb binary alloy. Through this process, the joint materials achieve...
We demonstrate gas sensing using silica high-mesa waveguide for the first time. A 4.5cm length waveguide show CO2 sensing at a wavelength of λ=1572nm with rapid sensing speed of below 15µs successfully.
We propose low loss silica high-mesa waveguide, of which a certain portion of propagation light profiles out of the waveguide, for infrared absorption. The implemented device showed extremely low loss of 0.02dB/cm
We demonstrate the concentration measurement of liquid by using silica high-mesa waveguide for the first time. It proves that a certain portion of the propagation light has profiled out actually from the waveguide. Moreover, the concentration measurement of 2% ethanol was also confirmed successfully.
We propose multiple slot silica high-mesa waveguide for infrared absorption, due to its possibility of realizing high portion of optical field out of the waveguide. It shows high portion of optical field out of the waveguide of 20.3%for fourfold structure at the wavelength of 1550nm.
Low-Ag-based Pb-free solder and its evaluation for electromigration (EM) reliability are research areas of active development. This paper studies the effect of adding Ni and Ge microelements on the EM behavior of low-Ag-based SnAgCu solder. Comparative measurements of the EM resistance of Sn1.0Ag0.5Cu (SAC) and Sn1.0Ag0.5Cu0.07Ni0.01Ge (SACNG) solders (in wt %) were conducted. In these experiments,...
The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good...
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