The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the evolvement of power supply with wide bandgap semiconductor, including SiC and GaN devices, is reviewed. Different circuit features are analyzed with unique device characteristics. By employing GaN HEMTs, the power convertor hardware is compared with conventional design. The detailed architecture of convertor is given to evaluate the trend of the next generation power convertors...
In this paper, a new rectifier structure in silicon carbide (SiC) is presented for the first time. The proposed structure involves neither Schottky contact nor minor carrier injection via P-N junction. With adjacent P+ areas placed sufficiently close, pinched barrier is formed for rectifier purpose. Numerical simulations are carried out to verify its function, and optimize its performance. Based on...
The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K to 473K. With the decrease of operation temperature, the threshold voltage is found to increase linearly whereas the on-resistance shows a minimum value within the whole temperature range. The rapid increase of on-resistance at lower temperature is ascribed to the presence of large densities of interface traps at...
In this paper, reverse characteristics of vertical-channel SiC-JFETs similar to an equivalent diode are discussed and compared with an actual SiC-SBD. The relationship between the reverse conduction voltage and the applied gate-to-source voltage is extracted along with channel structure of JFETs. Experiments involving operation of normally-off SiC-JFETs in actual converters are then conducted with...
UWB channel model is the research foundation of indoor positioning in wireless communication system. According to the path loss and multipath fading in channel model, we demonstrate the modeling method and characteristics of path loss channel model, channel model and S-V channel model. An improved S-V channel model of UWB system is proposed based on the analysis of the physical channel measured data...
Approximate entropy of the electroencephalogram (EEG) signal recorded at five different mental tasks was calculated in this paper. The results indicate that the approximate entropy of EEG signal vary greatly when different mental tasks are implemented, which implies that the approximate entropy can be employed as a feature of EEG signal to distinct different mental tasks. For different subjects, the...
A method for evaluating the actual parameters of SiC-JFETs with good accuracy is presented. For precise SiC-JFETs modeling, accurate parameters have to be evaluated. During the simulation study, a significant discrepancy is observed between the simulation and measurement transfer characteristics, especially at gate biases close to its threshold value. In order to account for such discrepancy, probability...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.