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Trench-filling technology realizes an outstanding productivity for fabricating the Super Junction (SJ) structure of SJ-MOSFETs. However, crystal defects that occur during epitaxial growth are causing poor electrical characteristics. Our optimized process reduced the number of crystal defects from over 2000/mm2 to under 10/mm2. As a result, we have achieved both low loss and low leakage current and...
Adsorption behavior of formate (HCOO − ) on Ni(110) surface has been investigated using a scanning tunneling microscope (STM) at cryogenic temperature. Formic acid (HCOOH) is found to dissociatively adsorb onto Ni(110) to produce formate at 50K. Atomically resolved STM images revealed that formates can occupy either short-bridged (S-formate) or long-bridged (L-formate) sites at 50K. At low...
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