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In this letter, a high-k composite oxide composed of and is investigated for n- metal–oxide–semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of (0.8 nm)/ (0.8 nm) on InGaAs with post deposition annealing at 500. The MOS...
This paper presents for the first time the extraction of chemical vapor deposition (CVD)-TiN and poly-Si work functions on atomic layer deposition (ALD)-HfO2 and high temperature SiO2 (HTO) for a wide range of EOT values. The measurements were performed on bevel oxide structures. Our results reveal that the work functions of both TiN and poly-Si gates highly depend on the underlying dielectrics especially...
In sub 90 nm CMOS technology the process variations seriously affect the performance specification for leakage power and delay. In this paper, we have analyzed the techniques to improve the design quality for power and performance sensitivity to process variations. At gate level forced stacking not only reduces leakage but also improves the robustness of the gate to process variations. Logic style...
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