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We report on unusual photoconductivity under the action of strong terahertz laser pulses in PbTe(Ga). The character and even the sign on the photoconductivity depends on the level of photoexcitation: it is positive and persistent at high degrees of excitation, whereas it is negative and non-persistent at low levels of excitation. We show that this non-trivial photoelectric behaviour is due to formation...
The effect of PbTe doping with In, Ga and V on photoconductive response at wavelengths up to 280 µm is studied. Mechanisms responsible for photoresponse appearance at light quant energy sufficiently lower than all characteristic energies in electronic spectrum are discussed.
A new type of semiconductor local states is revealed in Pb1−xSnxTe(In) narrow-gap semiconductors. The energy position of these states is not linked to any specific location in the semiconductor energy spectrum, but follows the quasiFermi level position, which may be tuned by photoexcitation.
Microstructure, charge transport and photoelectric properties are studied for PbTe(In) films deposited on amorphous substrates kept at different temperatures Ts during deposition. All the films have a column‐like structure with the mean column diameter increasing from 60 nm at the lowest Ts = ‐120 °C up to 300 nm at the maximal Ts = 250 °C. The substrate temperature increase results in appearance...
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