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This report presents results of design and manufacturing of X-band GaAs MMIC core chip for T/R modules of modern telecommunication and radiolocation systems. The MMIC are realized in the 0.18um pHEMT (ED02AH) process of OMMIC foundry.
The work provides an example of microwave (MW) GaAs MIC discrete phase shifter based on switching filters with the regard to gained experience of design and manufacturing of similar MIC for different frequency bands.
The design and fabrication of X-band MMIC low-noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The design and fabrication of X-band MMIC LNA is presented. MMIC is implemented with 0.15 mum pHEMT GaAs technology developed in the Institute of Microwave Semiconductor Electronics (Russia). Two-stage LNA is designed with using "visual" design CAD tools. In 7-10 GHz,...
An application of a new "visual" technique to design multistage low-noise amplifiers (LNA's) is presented. As an example, the design of X-band two-stage MMIC LNA is demonstrated basing on 0.15 mum GaAs p-HEMT technology. The design of multistage microwave LNA's is cumbersome and time-consuming process. In this paper we demonstrate an application of a new interactive "visual" technique...
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