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Silicon Carbide MOSFETs and Schottky diodes can operate at higher voltages and higher temperatures than their Silicon counterparts. Nowadays, SiC devices can compete with Si ultrafast diodes and Si IGBTs in terms of efficiency and converter volume. This paper shows the experimental characterization of SiC devices and their comparison with Si devices to demonstrate their superior performance in resonant...
The series connection of IGBTs is necessary when the blocking voltage requirements are higher than the rated voltage of commercially available IGBTs. However, voltage unbalances caused by different switching behaviors during the turn off process of series connected IGBTs could lead to the failure of one IGBT if it exceeds its maximum blocking voltage. This paper demonstrates that the proper operation...
This paper presents the dimensioning and comparison in terms of efficiency, cost and waveform quality of a Hybrid 7 Level converter and a Standard cascaded connected 7 Level converter for 26MVA and 15 kV STATCOM applications. In addition, these converters are compared with commercially available 2 Level and 3 Level NPC VSCs.
In this paper a simple behavioural IGBT model is proposed. Most of the needed parameters to characterise the model (static curves, leakage currents, etc) are available in the data sheets provided by the manufacturers. Curve fitting methods have been used to approach this model to the data sheets values. Other parameters like the interelectrode capacitances and the internal gate resistor can be experimentally...
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