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A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and...
The present work is focused on characterizing the behaviour of Hall Effect devices integrated in a regular bulk 0.35 μm CMOS technology, by providing amongst other, numerical data regarding their sensitivity, single and multi-phase offset. Also, the paper investigates the parabolic variation of the residual offset with the biasing current and the encapsulation offset. Temperature drifts of the main...
The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for...
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The temperature coefficient of specific parameters...
Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of offset at room temperature and offset drift. We looked for the best geometry that would minimize the offset and its drift. The targeted specification was ±30 µT for offset at room temperature and ±0.3 µT/°C for the drift. The measurement setup developed allows a clean, reliable and fast analysis of...
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