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This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys...
Resistive switching in Ni/SiO2/Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics,...
For the first time, growth of high-quality Ge-rich Ge1-xSix (0 ?? ?? ?? 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSix/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate...
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