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Si PIN photodiodes were fabricated on silicon-on-insulator with CMOS compatible process. Its characteristic was measured at 0.8 μm wavelength region. Ultra-low dark current of 14 pA was obtained at a bias voltage of −2 V. At the bias voltage of −10 V, a responsivity and a bandwidth were 5 mA/W and 6.7 GHz, respectively.
We fabricated an InGaAs metal-semiconductor-metal (MSM) photodetector bonded on Si substrate by Benzocyclobutene bonding method. The responsivity of 0.035 A/W at 1.55 µm-wavelenght and the dark current of 29 nA at the bias voltage of 6V were obtained. The bandwidth of 3 GHz was obtained at the bias voltage of 10 V.
Silicon avalanche photodiodes (APD) fabricated by 0.18 µm CMOS process with different interdigital electrode spacing were characterized at 850 nm wavelength. The largest bandwidth of 7 GHz was achieved for the APD with 1 µm electrode spacing, and the gain-bandwidth product was 270 GHz.
We fabricated Si photodiode from 0.35 µm BiCMOS process and measured the sensitivity and the frequency response at the wavelength of 650nm. The responsivity was 0.11 A/W and the bandwidth was about 1 GHz.
A silicon avalanche photodiode fabricated by CMOS process was characterized at 405 nm wavelength for Blu-ray applications. The avalanche gain of 36, the maximum responsivity of 2.61 A/W, and the bandwidth of 300 MHz were achieved.
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